tic253 series silicon triacs
1 december 1971 - revised september 2002 specifications are subject to change without notice. high current triacs 20 a rms glass passivated wafer 400 v to 800 v off-state voltage 150 a peak current max i gt of 50 ma (quadrants 1 - 3) absolute maximum ratings over operating case temperature (unless otherwise noted) notes: 1. these values apply bidirectionally for any value of resistance between the gate and main terminal 1. 2. this value applies for 50-hz full-sine-wave operation with resistive load. above 70c derate linearly to 110c case temperatu re at the rate of 500 ma/c. 3. this value applies for one 50-hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. surge may be repeated after the device has returned to original ther mal eq uilibrium. rating symbol value unit repetitive peak off-state voltage (see note 1) TIC253D tic253m tic253s tic253n v drm 400 600 700 800 v full-cycle rms on-state current at (or below) 70c case temperature (see note 2) i t(rms) 20 a peak on-state surge current full-sine-wave at (or below) 25c case temperature (see note 3) i tsm 150 a peak gate current i gm 1 a operating case temperature range t c -40 to +110 c storage temperature range t stg -40 to +125 c lead temperature 1.6 mm from case for 10 seconds t l 230 c electrical characteristics at 25c case tem perature (un less otherwise noted ) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = rated v drm i g = 0 t c = 110c 2 ma i gt gate trigger current v supply = +12 v? v supply = +12 v? v supply = -12 v? v supply = -12 v? r l = 10 ? r l = 10 ? r l = 10 ? r l = 10 ? t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s 15 -30 -20 32 50 -50 -50 ma v gt gate trigger voltage v supply = +12 v? v supply = +12 v? v supply = -12 v? v supply = -12 v? r l = 10 ? r l = 10 ? r l = 10 ? r l = 10 ? t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s 0.8 -0.8 -0.8 0.8 2 -2 -2 2 v v t on-state voltage i t = 28.2 a i g = 50 ma (see note 4) 1.4 1.7 v ? all voltages are with respect to main terminal 1. note 4: this parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdc2ada mt1 mt2 g 1 2 3
tic253 series silicon triacs 2
december 1971 - revised september 2002 specifications are subject to change without notice. ? all voltages are with respect to main terminal 1. note 5: the triacs are triggered by a 15-v (open-circuit amplitude) pulse supplied by a generator with the following characteristics: r g = 100 ? , t p(g) = 20 s, t r = 15 ns, f = 1 khz. i h holding current v supply = +12 v? v supply = -12 v? i g = 0 i g = 0 init? i t = 100 ma init? i t = -100 ma 20 -10 40 -40 ma i l latching current v supply = +12 v? v supply = -12 v? (see note 5) 20 -20 ma dv/dt critical rate of rise of off-state voltage v d = rated v d i g = 0 t c = 110c 450 v/s dv/dt (c) critical rise of commutation voltage v d = rated v d di/dt = 0.5 i t(rms) /ms t c = 80c i t = 1.4 i t(rms) 1 v/s di/dt critical rate of rise of on -state current v d = rated v d di g /dt = 50 ma/ s i gt = 50 ma t c = 110c 100 a/s thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.52 c/w r ja junction to free air thermal resist ance 36 c/w electrical characteristics at 25c case temperature (unless otherwise noted) (continued) parameter test conditions min typ max unit typical characteristics figure 1. figure 2. gate trigger current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i gt - gate trigger current - ma 1 10 100 tc10aa case temperature vs v supply i gtm + + + - - - - + v aa = 12 v r l = 10 ? t p(g) = 20 s gate trigger voltage t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 v gt - gate trigger voltage - v 0.1 1 10 tc10ab case temperature vs all quadrants v aa = 12 v r l = 10 ? t p(g) = 20 s
tic253 series silicon triacs 3
december 1971 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 3. figure 4. holding current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i h - holding current - ma 01 1 10 100 tc10ad case temperature vs v aa = 12 v i g = 0 initiating i tm = 100 ma v supply + - latching current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i l - latching current - ma 1 10 100 1000 tc10ae case temperature vs v aa = 12 v v supply i gtm + + + - - - - +
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